PART |
Description |
Maker |
M5M5256DFP-70VLL-W M5M5256DFP-85VXL-W M5M5256DRV-7 |
From old datasheet system Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-1 |
From old datasheet system 262144-BIT CMOS STATIC RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M5256CP-55LL M5M5256CP-55XL M5M5256CP-70LL M5M52 |
262144-bit (32768 x 8-bit) CMOS static RAM, 55ns 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 70ns
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CXK5T8257BM CXK5T8257BM-10LLX CXK5T8257BM-12LLX CX |
32768-word X 8-bit High Speed CMOS Static RAM
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SONY[Sony Corporation]
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HM628128BSERIES 62832H HM62832H HM62832HLP HM62832 |
32768-word x 8-bit High Speed CMOS Static RAM From old datasheet system
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hitachi
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M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
TC54256 TC54256AF TC54256AP |
32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY 32768 word x 8-bit CMOC one time programmable read only memory, 200ns
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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M5M5V32R16J-12 M5M5V32R16J-10 M5M5V32R16J-15 M5M5V |
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM 524288-BIT CMOS STATIC RAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HN27C256AG-10 HN27C256AGSERIES |
32768-word x 8-bit UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位(8388608字由16位)的CMOS闪存 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp. Renesas Electronics Corporation
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GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM 262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar LG[LG Semicon Co.,Ltd.]
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